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A Product Line of
Diodes Incorporated
DMP4050SSD
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Symbol
V DSS
Value
-40
Unit
V
Gate-Source Voltage
(Note 5)
V GS
? 20
V
(Notes 9 & 11)
-5.2
Continuous Drain Current
V GS = 10V
T A = +70°C (Notes 7 & 9)
I D
-4.2
A
(Notes 6 & 9)
-4.0
Pulsed Drain Current
V GS = 10V
(Notes 8 & 9)
I DM
-20.0
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Notes 7 & 9)
(Notes 8 & 9)
I S
I SM
-3.2
-20.0
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 9)
Symbol
Value
1.25
10.0
Unit
Power dissipation
Linear derating factor
(Notes 6 & 10)
P D
1.8
14.3
W
mW/°C
(Notes 7 & 9)
(Notes 6 & 9)
2.14
17.2
100
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
R θ JA
R ? JL
T J , T STG
70
58
53
-55 to +150
°C/W
°C
Notes:
5. AEC-Q101 V GS maximum is ? 16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (3), except the device is measured at t ? 10 sec.
8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMP4050SSD
Document Number DS32107 Rev 3 - 2
2 of 8
www.diodes.com
April 2013
? Diodes Incorporated
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